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Conference Paper

Patbhaje, U and Verma, R and Kumar, J and Ansh, A and Shrivastava, M (2023) Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Kumar, J and Ansh, A and Kuruva, H and Shrivastava, M (2020) Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. In: Device Research Conference - Conference Digest, DRC, 21-24 June 2020, Columbus; United States.

Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

Kumar, J and Meersha, A and Ansh, A and Shrivastava, M (2019) A First principle insight into defect assisted contact engineering at the metal-graphene and metal-phosphorene interfaces. In: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, 4 - 6 September 2019, Udine.

Journal Article

Ansh, A and Patbhaje, U and Kumar, J and Meersha, A and Shrivastava, M (2023) Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition. In: Communications Materials, 4 (1).

Ansh, A and Kumar, J and Sheoran, G and Shrivastava, M (2020) Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors. In: npj 2D Materials and Applications, 4 (1).

Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.