Number of items: 2.
Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N
(2017)
Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si.
In: SOLID-STATE ELECTRONICS, 137
.
pp. 117-122.
Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu
(2013)
k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire.
In: SOLID-STATE ELECTRONICS, 80
.
pp. 124-134.
This list was generated on Sat Dec 21 21:24:01 2024 IST.
