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Number of items: 37.

Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.

Sanjay, S and Sahoo, K and Bhat, N (2020) Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs. In: IEEE Transactions on Electron Devices, 67 (9). pp. 3711-3715.

Chourasia, NK and Singh, AK and Rai, S and Sharma, A and Chakrabarti, P and Srivastava, A and Pal, BN (2020) A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor with NH3Sensing Application. In: IEEE Transactions on Electron Devices, 67 (10). pp. 4385-4391.

Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.

Soni, A and Ajay, . and Shrivastava, M (2020) Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD-RON Tradeoff and RF PA Performance. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1718-1725.

Panigrahi, R and Joy Thomas, M and Vinoy, KJ (2020) A New Fabrication Method for Serpentine-Folded Waveguide Slow Wave Structure at W -Band. In: IEEE Transactions on Electron Devices, 67 (3). pp. 1198-1204.

Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.

Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.

Shankar, B and Raghavan, S and Shrivastava, M (2020) Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1567-1574.

Shankar, B and Shrivastava, M (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE Transactions on Electron Devices, 66 (10). pp. 4140-4147.

Nittala, PVK and Sahoo, K and Bhat, N and Bhat, KN and Sen, P (2019) Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1153-1159.

Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.

Roul, B and Pant, R and Chowdhury, AM and Chandan, G and Singh, DK and Chirakkara, S and Nanda, KK and Krupanidhi, SB (2019) Highly responsive ZnO/AlN/Si heterostructure-based infrared- and visible-blind ultraviolet photodetectors with high rejection ratio. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1345-1352.

Talukder, Santanu and Kumar, Praveen and Pratap, Rudra (2013) Electric current-induced mass flow in very thin infinite metallic films. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2877-2883.

Sengupta, Amretashis and Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Performance Analysis of Strained Monolayer MoS2 MOSFET. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2782-2787.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet. In: IEEE Transactions on Electron Devices, 60 (8). pp. 2695-2698.

Sharan, Neha and Mahapatra, Santanu (2013) Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry. In: IEEE Transactions on Electron Devices, 60 (7). pp. 2419-2422.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Thermoelectric performance of a single-layer graphene sheet for energy harvesting. In: IEEE Transactions on Electron Devices, 60 (6). pp. 2064-2070.

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, Sangeneni (2013) Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors. In: IEEE Transactions on Electron Devices, 60 (5). pp. 1523-1528.

Jandhyala, Srivatsava and Abraham, Aby and Anghel, Costin and Mahapatra, Santanu (2012) Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 59 (7). pp. 1974-1979.

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, S (2012) High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric. In: IEEE Transactions on Electron Devices, 59 (5). pp. 1364-1370.

Abraham, Aby and Jandhyala, Srivatsava and Mahapatra, Santanu (2012) Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 59 (4). pp. 1199-1202.

Jandhyala, Srivatsava and Kashyap, Rutwick and Anghel, Costin and Mahapatra, Santanu (2012) A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry. In: IEEE Transactions on Electron Devices, 59 (4). pp. 1002-1007.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Theoretical estimation of electromigration in metallic carbon nanotubes considering self-heating effect. In: IEEE Transactions on Electron Devices, 59 (9). pp. 2476-2482.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2011) Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube Interconnects. In: IEEE Transactions on Electron Devices, 58 (11). pp. 3991-3996.

Jandhyala, Srivatsava and Mahapatra, Santanu (2011) An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (6). pp. 1663-1671.

Thakur, Pankaj Kumar and Mahapatra, Santanu (2011) Large-Signal Model for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (1). pp. 46-52.

Majumdar, Kausik and Bhat, Navakanta and Majhi, Prashant and Jammy, Raj (2010) Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit. In: IEEE Transactions on Electron Devices, 57 (9). pp. 2264-2273.

Sumathy, M and Vinoy, KJ and Datta, SK (2010) Analysis of Ridge-Loaded Folded-Waveguide Slow-Wave Structures for Broadband Traveling-Wave Tubes. In: IEEE Transactions on Electron Devices, 57 (6). pp. 1440-1446.

Sahoo, A and Thakur, PK and Mahapatra, S (2010) A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors. In: IEEE Transactions on Electron Devices, 57 (3). pp. 632-636.

Ray, Biswajit and Mahapatra, Santanu (2009) Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor. In: IEEE Transactions on Electron Devices, 56 (2). pp. 260-266.

Ray, Biswajit and Mahapatra, Santanu (2008) Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire Transistor. In: IEEE Transactions on Electron Devices, 55 (9). pp. 2409-2416.

Sathe, Chaitanya and Dan, Surya Shankar and Mahapatra, Santanu (2008) Assessment of SET Logic Robustness Through Noise Margin Modeling. In: IEEE Transactions on Electron Devices, 55 (3). pp. 909-915.

Paul, Bipul Chandra and Satyam, M and Selvarajan, A (1999) A Novel Method of Optical Detection Using a Capacitive Device. In: IEEE Transactions on Electron Devices, 46 (2). pp. 324-328.

Rogers, CP and Inam, A and Hegde, MS and Venkatesan, T and Wu, XD and Dutta, B (1989) Heteroepitaxial Yba2cu3o7-X-Prba2cu3o7-X-Yba2cu3o7-X Weak Links Grown By Laser Deposition. In: IEEE Transactions on Electron Devices, 36 (11). p. 2631.

Vishwanatha, KV and Satyam, M (1979) Effect of a linear potential variation on the gate of an FET. In: IEEE Transactions on Electron Devices, 26 (7). pp. 1102-1103.

Chakrabarti, Utpal K (1975) Approximate solution for the redistribution of impurities during second oxidation. In: IEEE Transactions on Electron Devices, 22 (8). pp. 566-568.

This list was generated on Sun Apr 11 12:31:59 2021 IST.