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Number of items: 59.

Paul, Milova and Kumar, B Sampath and Nagothu, Kranthi Karmel and Singhal, Pulkit and Gossner, Harald and Shrivastava, Mayank (2019) Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (12). pp. 5072-5079.

Bansiwal, Ashok and Raina, Sushil and Vinoy, K J and Datta, Subrata Kumar (2019) Equivalent Circuit Analysis of a Rectangular Double-Reentrant Cavity With Circular Cylindrical Ferrule for Klystrons. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (11). pp. 4952-4956.

Shankar, Bhawani and Shrivastava, Mayank (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (10). pp. 4140-4147.

Shankar, Bhawani and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Reliability of AlGaN/GaN HEMT Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (9). pp. 3756-3763.

Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.

Kumar, Sandeep and Soman, Rohith and Pratiyush, Anamika Singh and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Performance Comparison Between beta-Ga2O3 and GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3310-3317.

Bansiwal, Ashok and Raina, Sushil and Vinoy, K J and Datta, S K (2019) A Broadband Rectangular Reentrant Cavity for Multiple-Beam Klystron. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (7). pp. 3168-3170.

Hemanjaneyulu, Kuruva and Kumar, Jeevesh and Shrivastava, Mayank (2019) MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (7). pp. 3224-3228.

Sinha, Rajat and Bhattacharya, Prasenjit and Iben, Icko Eric Timothy and Sambandan, Sanjiv and Shrivastava, Mayank (2019) ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2624-2630.

Soni, Ankit and Shikha, Swati and Shrivastava, Mayank (2019) On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2569-2576.

Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.

Marques, Gabriel Cadilha and von Seggern, Falk and Dehm, Simone and Breitung, Ben and Hahn, Horst and Dasgupta, Subho and Tahoori, Mehdi B and Aghassi-Hagmann, Jasmin (2019) Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and Circuits. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (5). pp. 2202-2207.

Roy, Diptoshi and Varma, GSreevidya and Asokan, S and Das, Chandasree (2019) Electrical Switching and Optical Bandgap Studies on Quaternary Ag-Doped Ge-Te-In Thin Films. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (4). pp. 1881-1886.

Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 561-569.

Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 570-577.

Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.

Kumar, Sandeep and Kumar, Himanshu and Vura, Sandeep and Pratiyush, Anamika Singh and Charan, Vanjari Sai and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (3). pp. 1230-1235.

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.

Murali, Krishna and Majumdar, Kausik (2018) Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (10). pp. 4141-4148.

Bhat, Navakanta and Das, Saptarshi and Esseni, David and Liang, Gengchiau and Moshkalev, Stanislav A and Muneta, Iriya and Schwierz, Frank and Teherani, James T and De Vittorio, Massimo and Yoon, Youngki (2018) Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (10). pp. 4034-4039.

Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.

Chakraborty, Ananda Sankar and Mahapatra, Santanu (2018) Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (3). pp. 888-894.

Brahma, Madhuchhanda and Bescond, Marc and Logoteta, Demetrio and Ghosh, Ram Krishna and Mahapatra, Santanu (2018) Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (3). pp. 1198-1204.

Kumar, B Sampath and Shrivastava, Mayank (2018) Part I: On the Unification of Physics of Quasi-Saturation in LDMOS Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 191-198.

Kumar, B Sampath and Shrivastava, Mayank (2018) Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 199-206.

Saha, Dipankar and Mahapatra, Santanu (2017) Asymmetric Junctions in Metallic-Semiconducting-Metallic Heterophase MoS2. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (5, SI). pp. 2457-2460.

Shrivastava, Mayank (2017) Drain Extended Tunnel FET-A Novel Power Transistor for RF and Switching Applications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (2). pp. 481-487.

Roul, Basanta and Pant, Rohit and Chirakkara, Saraswathi and Chandan, Greeshma and Nanda, K K and Krupanidhi, S B (2017) Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4161-4166.

Gangavarapu, Yasasvi PR and Lokesh, Punith C and Bhat, KN and Naik, AK (2017) Graphene Electrodes as Barrier-Free Contacts for Carbon Nanotube Field-Effect Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4335-4339.

Somayaji, Jhnanesh and Kumar, Sampath B and Bhat, M S and Shrivastava, Mayank (2017) Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4175-4183.

Chakraborty, Ananda Sankar and Mahapatra, Santanu (2017) Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (4). pp. 1519-1527.

Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.

Udatha, Sambashiva R and Ruhela, Abhinav and Saravanavel, Ganapathy and Yaswant, Vaddi and Singh, Jaspal and Sambandan, Sanjiv (2016) Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (4). pp. 1696-1703.

Choudhury, Aditya Roy N and Venkataraman, Venki (2016) A Novel Technique to Measure Interface Trap Density in an MIS Capacitor Using Time-Varying Magnetic Fields. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (8). pp. 3011-3018.

Swain, Peeyusha Saurabha and Shrivastava, Mayank and Baghini, Maryam Shojaei and Gossner, Harald and Rao, Valipe Ramgopal (2016) On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (4). pp. 1621-1629.

Chandrasekar, Hareesh and Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Bhat, Navakanta and Nath, Digbijoy N (2016) Optical-Phonon-Limited High-Field Transport in Layered Materials. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (2). pp. 767-772.

Padmanabhan, Revathy and Mohan, Sangeneni and Morozumi, Yuichiro and Kaushal, Sanjeev and Bhat, Navakanta (2016) Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3928-3935.

Majumdar, Kausik and Datta, Suman and Rao, Satyavolu Papa (2016) Revisiting the Theory of Ferroelectric Negative Capacitance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (5). pp. 2043-2049.

Saravanavel, Ganapathy and Raghunandan, Karthik and Sambandan, Sanjiv (2016) Soft and Morphable Displays and Profilometers: Self-Assembled Out-of-Plane by Capillary Pressure Acting on a Gel. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (5). pp. 2023-2028.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (6). pp. 2556-2562.

Hemanjaneyulu, Kuruva and Shrivastava, Mayank (2015) Fin-Enabled-Area-Scaled Tunnel FET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3184-3191.

Padilla, Alvaro and Burr, Geoffrey W and Shenoy, Rohit S and Raman, Karthik V and Bethune, Donald S and Shelby, Robert M and Rettner, Charles T and Mohammad, Juned and Virwani, Kumar and Narayanan, Pritish and Deb, Arpan K and Pandey, Rajan K and Bajaj, Mohit and Murali, K V R M and Kurdi, Buelent N and Gopalakrishnan, Kailash (2015) On the Origin of Steep I-V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES , MAR 2015, USA, pp. 963-971.

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2015) Part I: High-Voltage MOS Device Design for Improved Static and RF Performance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3168-3175.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part I: Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4097-4104.

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Chandorkar, AN and Gossner, Harald and Rao, Ramgopal V (2015) Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3176-3183.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4105-4113.

Ghatge, Mayur and Shrivastava, Mayank (2015) Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4139-4147.

Chanana, Anuja and Mahapatra, Santanu (2015) Theoretical Insights to Niobium-Doped Monolayer MoS2-Gold Contact. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (7). pp. 2346-2351.

Bhattacharya, Sitangshu and Saha, Dipankar and Bid, Aveek and Mahapatra, Santanu (2014) A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (11). pp. 3646-3653.

Ghosh, Ram Krishna and Brahma, Madhuchhanda and Mahapatra, Santanu (2014) Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (7). pp. 2309-2315.

Sharan, Neha and Mahapatra, Santanu (2014) A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (8). pp. 2732-2737.

Abraham, Aby and Thakur, Pankaj Kumar and Mahapatra, Santanu (2013) Bipolar Poisson Solution for Independent Double-Gate MOSFET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 498-501.

Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 274-279.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 502-505.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (10, SI). pp. 3548-3554.

Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 (6). pp. 1765-1772.

Sambandan, Sanjiv (2012) Self Repair in Circuits-Automating Open Fault Repair in Integrated Circuits Using Field-Induced Aggregation of Carbon Nanotubes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 (6). pp. 1773-1779.

Dan, Surya Shankar and Mahapatra, Santanu (2009) Impact of Energy Quantization on the Performance of Current-Biased SET Circuits. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 (8). pp. 1562-1566.

This list was generated on Sun Apr 18 02:32:15 2021 IST.