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Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
Monishmurali, M and Paul, M and Shrivastava, M (2020) Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.
Kumar, J and Ansh, K and Yadav, A and Singh, A and Naclerio, A and Zakharov, D and Kidambi, P and Shrivastava, M (2020) Physical Insights into Phosphorene Transistor Degradation under Exposure to Atmospheric Conditions and Electrical Stress. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May, 2020, Virtual, Online; United States.
