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Remesh, Nayana and Kumar, Sandeep and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE .
Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.
Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.
