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Rao, A and Kumar, K and Raghavan, S (2022) Modeling and Experimental Evidence of the Effect of Concentration Gradients on the Surface Processes during CVD Growth of MoS2. In: 5th IEEE International Conference on Emerging Electronics, ICEE 2020, 26 - 28 November 2020, New Delhi.
Rao, A and Sanjay, S and Dey, V and Ahmadi, M and Yadav, P and Venugopalrao, A and Bhat, N and Kooi, B and Raghavan, S and Nukala, P (2023) Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform. In: Materials Horizons, 10 (11). 5235 -5245.
Seriyala, AK and Rao, A and Leclerc, C and Appari, S and Roy, B (2023) Effects of metal loading and support modification on the low-temperature steam reforming of ethanol (LTSRE) over the Ni–Sn/CeO2 catalysts. In: International Journal of Hydrogen Energy .
Rao, A and Raghavan, S (2022) Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics. In: Journal of Materials Chemistry C, 10 (28). pp. 10412-10423.
Niranjan, S and Rao, A and Muralidharan, R and Sen, P and Nath, DN (2022) Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1014-1019.
Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.
Rao, H and Rao, A and Chanakya, HN (2021) Fate of heavy metals in sewage and polluted water bodies. In: Current Science, 121 (1). pp. 109-114.
Mohta, N and Rao, A and Remesh, N and Muralidharan, R and Nath, DN (2021) An artificial synaptic transistor using an α-In2Se3van der Waals ferroelectric channel for pattern recognition. In: RSC Advances, 11 (58). pp. 36901-36912.
