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Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).
Remesh, N and Chandrasekar, H and Venugopalrao, A and Raghavan, S and Rangarajan, M and Nath, DN (2021) Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In: Journal of Applied Physics, 130 (7).
Solanke, SV and Soman, R and Rangarajan, M and Raghavan, S and Nath, DN (2021) UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction. In: Sensors and Actuators, A: Physical, 317 .
