|
 | Up a level |
Sahoo, J and Vijayakumar, P and Saquib, T and Suganya, M and Ganesamoorthy, S and Muralidharan, R and Nath, DN (2023) Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode. In: 9th IEEE India International Conference on Power Electronics, IICPE 2023, 28 November 2023 through 30 November 2023.
Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.
Mech, RK and Mohta, N and Muralidharan, R and Nath, DN (2019) Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer α -InSe. In: 2019 Device Research Conference (DRC), 23-26 June 2019, Ann Arbor, MI, USA, pp. 189-190.
Saquib, T and Akyol, F and Ozden, H and Somaiah, N and Sahoo, J and Muralidharan, R and Nath, DN (2024) Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction. In: Journal of Applied Physics, 135 (6).
Sahoo, J and Vijayakumar, P and Saquib, T and Suganya, M and Ganesamoorthy, S and Muralidharan, R and Nath, DN (2024) Study of optical float-zone grown gallium oxide Schottky barrier diode. In: Semiconductor Science and Technology, 39 (5).
Ul Muazzam, U and Muralidharan, R and Raghavan, S and Nath, DN (2023) Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD. In: Optical Materials, 145 .
Baby, R and Mandal, M and Roy, SK and Bardhan, A and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing. In: Microelectronic Engineering, 282 .
Niranjan, S and Muralidharan, R and Sen, P and Nath, DN (2022) Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4212-4217.
Charan, VS and Muralidharan, R and Raghavan, S and Nath, DN (2022) 20.2 GHz-µm fT–LG in InAlN/GaN-on-Si High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Niranjan, S and Rao, A and Muralidharan, R and Sen, P and Nath, DN (2022) Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1014-1019.
Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).
Remesh, N and Chandrasekar, H and Venugopalrao, A and Raghavan, S and Rangarajan, M and Nath, DN (2021) Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In: Journal of Applied Physics, 130 (7).
Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.
Solanke, SV and Soman, R and Rangarajan, M and Raghavan, S and Nath, DN (2021) UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction. In: Sensors and Actuators, A: Physical, 317 .
Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .
Mohta, N and Rao, A and Remesh, N and Muralidharan, R and Nath, DN (2021) An artificial synaptic transistor using an α-In2Se3van der Waals ferroelectric channel for pattern recognition. In: RSC Advances, 11 (58). pp. 36901-36912.
Nittala, PVK and Remesh, N and Niranjan, S and Tasneem, S and Raghavan, S and Muralidharan, R and Nath, DN and Sen, P (2020) Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader. In: IEEE Transactions on Components, Packaging and Manufacturing Technology, 10 (2). pp. 339-342.
Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.
Muazzam, UU and Raghavan, MS and Pratiyush, AS and Muralidharan, R and Raghavan, S and Nath, DN and Shivashankar, SA (2020) High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition. In: Journal of Alloys and Compounds, 828 .
Rathkanthiwar, S and Kalra, A and Remesh, N and Bardhan, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111). In: Journal of Applied Physics, 127 (21).
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Niranjan, S and Guiney, I and Humphreys, CJ and Sen, P and Muralidharan, R and Nath, DN (2020) Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 38 (3).
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .
Mech, RK and Mohta, N and Chatterjee, A and Selvaraja, SK and Muralidharan, R and Nath, DN (2020) High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3. In: Physica Status Solidi (A) Applications and Materials Science, 217 (5).
Mohta, N and Mech, RK and Sanjay, S and Muralidharan, R and Nath, DN (2020) Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics. In: Physica Status Solidi (A) Applications and Materials Science .
Kalra, A and Rathkanthiwar, S and Muralidharan, R and Raghavan, S and Nath, DN (2020) Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes. In: Semiconductor Science and Technology, 35 (3).
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Muazzam, UU and Chavan, P and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optical Properties of Mist CVD Grown α-Ga2O3. In: IEEE Photonics Technology Letters, 32 (7). pp. 422-425.
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.
Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Pratiyush, AS and Krishnamoorthy, S and Kumar, S and Xia, Z and Muralidharan, R and Rajan, S and Nath, DN (2018) Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. In: Japanese Journal of Applied Physics, 57 (6).
