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Kumar, Sandeep and Kumar, Himanshu and Vura, Sandeep and Pratiyush, Anamika Singh and Charan, Vanjari Sai and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (3). pp. 1230-1235.
