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Conference Proceedings

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2023) Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Conference Paper

Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2020) Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 13 - 18 September 2020, Virtual, Online, pp. 341-344.

Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

Journal Article

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2022) Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 69 (11). pp. 6035-6042.

Gupta, SD and Joshi, V and Chaudhuri, RR and Shrivastava, M (2021) Part I: Physical Insights into Dynamic RONBehavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (11). pp. 5720-5727.

Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2021) On the Channel Hot-Electron's Interaction with C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (10). pp. 4869-4876.

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2021) Interplay between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs - Part II. In: IEEE Transactions on Electron Devices, 68 (1). pp. 80-87.