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Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.
Baby, R and Mandal, M and Roy, SK and Bardhan, A and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing. In: Microelectronic Engineering, 282 .
Bardhan, A and Raghavan, S (2022) Growth design for high quality AlxGa(1�x)N layer with high AlN-fraction on Si (1 1 1) substrate by MOCVD. In: Journal of Crystal Growth, 578 .
Rathkanthiwar, S and Kalra, A and Remesh, N and Bardhan, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111). In: Journal of Applied Physics, 127 (21).
