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Ansh, Ansh and Shrivastava, M (2022) Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process. In: Journal of Physics D: Applied Physics, 55 (8).
Kumar, J and Ansh, Ansh and Shrivastava, M (2021) Introduction of near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight. In: ACS Omega .
