Goswami, J and Ananthakrishna, G and Shivashankar, SA (1997) Monte Carlo simulation of nucleation and growth of thin films. In: India-Japan Seminar on New Materials, 21-22 Oct. 1996, Hyderbad, India, pp. 823-843.
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We study thin film growth using a lattice-gas, solid-on solid model employing the Monte Carlo technique. The model is applied to chemical vapour deposition (CVD) by including the rate of arrival of the precursor molecules and their dissociation. We include several types of migration energies including the edge migration energy which allows the diffusive movement of the monomer along the interface of the growing film, as well as a migration energy which allows for motion transverse to the interface. Several well known features of thin film growth are mimicked by this model, including some features of thin copper films grown by CVD. Other features reproduced are - compact clusters, fractal-like clusters, Frank-van der Merwe layer-by-layer growth and Volmer-Weber island growth. This method is applicable to film growth both by CVD and by physical vapour deposition (PVD).
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Indian Academy of Sciences |
| Additional Information: | copyright of this article belongs to Indian Academy of Sciences |
| Keywords: | chemical vapour deposition;lattice gas;Monte Carlo methods;nucleation;surface diffusion;thin films |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 20 Aug 2007 |
| Last Modified: | 27 Aug 2008 12:38 |
| URI: | http://eprints.iisc.ac.in/id/eprint/9883 |
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