Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR

Goyal, M and Chaturvedi, M and Kumar, R and Vaidya, M and Shrivastava, M (2024) Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.

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Abstract

In this work co-optimization of silicon-controlled rectifier (SCR) ESD characteristics with its low voltage trigger circuit is presented. Resistance and Capacitance (RC) controlled thick gate NMOS and PMOS based circuits have been explored and compared. The design approach is discussed and presented for low trigger SCR for two different trigger circuits. In the process we find that some of the trigger circuits previously reported in literature do not work as desired until co-optimized device engineering techniques are used. The circuit insights are explored using well calibrated electrothermal 3D process and device TCAD mixed mode simulations. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Capacitance; Electric rectifiers; Electrostatic devices; Thyristors; Timing circuits, Co-optimization; Design tradeoff; Design tradeoff in ESD; Device design; Device engineering; DTCO in ESD; ESD device design; Nano scale; Silicon-controled rectifier trigger circuit; Trigger action, Trigger circuits
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 11:20
Last Modified:	13 Aug 2024 11:20
URI:	http://eprints.iisc.ac.in/id/eprint/85291

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