Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs

Chaudhuri, RR and Joshi, V and Wani, SS and Karthik, SR and Malik, RR and Shrivastava, M (2024) Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS),2024, 14-18 April 2024, Grapevine.

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Abstract

In this work, we reveal the presence of unique phonon-assisted hot electron transitions during semi-ON state operation of AlGaN/GaN HEMTs resulting in distinct self-heating behavior of the device. This establishes the importance of considering hot electron-triggered transitions, in addition to conventionally considered self-heating sources, while estimating heating effects in these devices. The phenomena are probed through detailed experimentation involving devices with different field plate lengths, electroluminescence microscopy and spectroscopy, and thermal imaging analysis. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Electron transitions; Gallium nitride; High electron mobility transistors; Hot electrons; III-V semiconductors; Infrared imaging, AlGaN/GaN HEMTs; AlGaN/GaN-HEMT; GaN reliability; Heating effect; Heating source; Hot electron transitions; Inter-valley transition; Phonon assisted; Self-heating; Triggered transitions, Electroluminescence
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	13 Aug 2024 09:49
Last Modified:	13 Aug 2024 09:49
URI:	http://eprints.iisc.ac.in/id/eprint/85283

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