Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer α -InSe

Mech, RK and Mohta, N and Muralidharan, R and Nath, DN (2019) Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer α -InSe. In: 2019 Device Research Conference (DRC), 23-26 June 2019, Ann Arbor, MI, USA, pp. 189-190.

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Abstract

We report on the first demonstration of photodetector as well as the observation of photovoltaic effect based on vertical transport in multilayer α -InSe. A metal/ α -In2Se/ITO vertical junction was used to achieve an ultra-high responsivity of 1000 A/W even at a low bias of 0.5 V with a clear band-edge corresponding to multilayer α -InSe. Additionally, an asymmetric barrier height arising out of ITO and Au contacts to vertical α -InSe resulted in photovoltaic effect with \mathrmV-\mathrmOC∼ 0.1\mathrmV and \mathrmI-\mathrmS\mathrmC∼ 0.4μ \mathrmA under 520 nm illumination. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	Device Research Conference - Conference Digest, DRC
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 2019 Device Research Conference, DRC 2019 ; Conference Date: 23 June 2019 Through 26 June 2019; Conference Code:158877
Keywords:	Multilayers, Asymmetric barriers; Clear bands; Low bias; Responsivity; Ultra-high; Vertical junctions; Vertical transports, Photovoltaic effects
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	07 Sep 2020 09:57
Last Modified:	07 Sep 2020 09:57
URI:	http://eprints.iisc.ac.in/id/eprint/65264

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