Substrate temperature influenced ZrO2 films for MOS devices

Kondaiah, P and Jagadish Chandra, SV and Fortunato, E and Chel Jong, C and Mohan Rao, G and Koti Reddy, DVR and Uthanna, S (2020) Substrate temperature influenced ZrO2 films for MOS devices. In: Surface and Interface Analysis, 52 (9). pp. 541-546.

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Abstract

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 � 10�2 Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO2/Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 � 10�7 to 0.64 � 10�9 A cm�2 with the increase of substrate temperature from 303 to 673 K. © 2020 John Wiley & Sons, Ltd.

Item Type:	Journal Article
Publication:	Surface and Interface Analysis
Publisher:	John Wiley and Sons Ltd
Additional Information:	copyright for this article belongs to John Wiley and Sons Ltd
Keywords:	Crystallite size; Dielectric materials; Dielectric properties; High-k dielectric; Leakage currents; Metals; MOS devices; Oxide films; Oxide semiconductors; Permittivity; Refractory metal compounds; Silicon; Silicon compounds; Sputtering; Thin films; Zirconia, Conduction Mechanism; Direct-current magnetrons; High- k; Interface engineering; Interface quality; Oxygen partial pressure; Substrate temperature; X-ray diffraction studies, Substrates
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	14 Sep 2020 11:10
Last Modified:	14 Sep 2020 11:10
URI:	http://eprints.iisc.ac.in/id/eprint/65066

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