ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

High electron mobility large grain polycrystalline epitaxial Germanium on Silicon using liquid phase crystallization for III-V photovoltaic applications

Chaurasia, SS and Raghavan, SN and Avasthi, SS (2019) High electron mobility large grain polycrystalline epitaxial Germanium on Silicon using liquid phase crystallization for III-V photovoltaic applications. In: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 16-21 June 2019, Chicago, IL, USA, USA, pp. 1734-1736.

[img] PDF
CON_REC_IEEE_PHO_SPE_1734-1736_2019.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: https://dx.doi.org/10.1109/PVSC40753.2019.8981348

Abstract

Germanium is considered an important electronic material which can serve both as a photo-voltaic material as well as a substrate for low cost III-V solar cells on silicon. However, growth of high quality germanium on silicon is challenging due to 4 lattice mismatch. In this work, we present growth of epitaxial, large grain polycrystalline germanium on silicon using liquid phase crystallization. The method involves re-crystallization of PECVD deposited amorphous Ge on Si using a two-step annealing process by melting (937oC) amorphous thin film and cooling it right below the melting point leading to high quality and large grains. SEM XRD and hall measurements were done to evaluate the material and electronic quality of the films. The films cooled near melting point were found to have largest grains of size �14 μm and XRD rocking curve FWHM of as low as �300 arc-sec. Films also demonstrated record high electron mobility of 500-1000 cm2Vs-1.The process is scalable and orientation agnostic with comparable film quality for all orientations. © 2019 IEEE.

Item Type: Conference Paper
Publication: Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: cited By 0; Conference of 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference Date: 16 June 2019 Through 21 June 2019; Conference Code:157434
Keywords: Amorphous silicon; Carrier mobility; Electron mobility; Epitaxial growth; Gallium arsenide; Germanium; III-V semiconductors; Lattice mismatch; Melting point; Silicon; Substrates; Thin films; X ray diffraction, Amorphous thin films; Electronic materials; GaAs; Germanium on silicons; High electron mobility; Photovoltaic; Photovoltaic applications; Polycrystalline germanium, Solar cells
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 28 Sep 2020 07:22
Last Modified: 28 Sep 2020 07:22
URI: http://eprints.iisc.ac.in/id/eprint/65014

Actions (login required)

View Item View Item