High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition

Muazzam, UU and Raghavan, MS and Pratiyush, AS and Muralidharan, R and Raghavan, S and Nath, DN and Shivashankar, SA (2020) High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition. In: Journal of Alloys and Compounds, 828 .

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Abstract

We report on the demonstration of (InxGa1-x)2O3 (InGaO)-based UV photodetectors realized using a low temperature (�200 °C) microwave irradiation-assisted deposition technique. By irradiating a solution of the substituted acetylacetonate (acac) complex, namely In0.6Ga0.4(acac)3, employed as the �single-source precursor�, InGaO film was deposited on sapphire substrate, and found to be poly(nano)crystalline, with root mean square (r.m.s). roughness of 8.9 nm. However, the indium content of the film (0.26 mol fraction) was considerably less than in the metal complex (0.6 mol fraction). The optical band gap of the film was found to be 4.5 eV from Tauc's plot, indicative of a low indium mole fraction. This was confirmed using X-ray photoelectron spectroscopy measurements, from which the indium mole fraction was found to be 0.26. Further, the nature of band gap was determined and defect analysis was carried out using, respectively, Tauc's plot and cathodoluminescence (CL) measurements. A planar, interdigitated metal-semiconductor-metal (MSM) photodetector fabricated with the InGaO film exhibited a high responsivity of 16.9 A/W at a bias of 20 V, corresponding to a band edge at � 276 nm, with a high photo-to-dark current ratio of �105.

Item Type:	Journal Article
Publication:	Journal of Alloys and Compounds
Publisher:	ELSEVIER SCIENCE SA
Additional Information:	copyright for this article belongs to Elsevier
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	29 Jun 2020 10:41
Last Modified:	29 Jun 2020 10:41
URI:	http://eprints.iisc.ac.in/id/eprint/64749

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