Garg, Sahil and Kaushal, Bipan and Singh, Arun K and Kumar, Sanjeev and Mahapatra, Santanu (2019) Parametric Optimization of Self-Switching Diode. In: 2018 IEEE 13TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC), OCT 14-17, 2018, Portland, USA, pp. 323-326.
PDF
13th Nanotechnology_Mat_Dev_Conf (NMDC).pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
Parametric optimization of a novel nano diode called self-switching device has been demonstrated using Silvaco TCAD simulator. The device exhibits non-linear characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage can be tuned by varying channel width of the device. The increase in channel doping concentration exhibits velocity saturation, hence, leading to the saturation of output current at higher voltages. The low subthreshold swing of about 100 mV/decade suggests potential utilization of SSDs in high on-off ratio, low power and low voltage electronic applications.
Item Type: | Conference Poster |
---|---|
Series.: | IEEE Nanotechnology Materials and Devices Conference |
Publisher: | IEEE |
Additional Information: | 13th IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, OCT 14-17, 2018 |
Keywords: | terahertz (THz); rectifier; two dimensional electron gas (2DEG); self-switching device (SSD); subthreshold swing |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 26 Jun 2019 15:13 |
Last Modified: | 26 Jun 2019 15:13 |
URI: | http://eprints.iisc.ac.in/id/eprint/62822 |
Actions (login required)
View Item |