Oxygen deficiency induced nickel based oxides for UV & IR sensitive photo-conductive devices

Parui, Jayanta and Murali, Banavoth and Biradar, Balaji and Krupanidhi, S B (2018) Oxygen deficiency induced nickel based oxides for UV & IR sensitive photo-conductive devices. In: MATERIALS RESEARCH BULLETIN, 107 . pp. 321-327.

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Abstract

Ni(NO3)(3)center dot 6H(2)O has been thermally decomposed to synthesize NiOx (0 < x < 1) and a modified citrate-nitrate route has been employed for LaNiO3-delta synthesis. These metal oxides have been characterized by XRD, SEM, TEM, XPS and UV-vis spectroscopy for the determination of their crystal structures, structural morphologies, oxidation states and optical band gaps. The devices, made of nanocrystalline-composites or nanocomposites, have been fabricated on gold coated soda lime glasses, where the device based on NiOx has been found applicable for UV photo-conducting and LaNiO3-delta has been recognized as a potential IR photo-conducting sensors. Their respective current amplifications have been recorded 8 and 2.2 times more than the dark current at 2 V of DC bias. The UV sensor has been explained by direct band gap semiconducting nature of NiOx and IR sensitivity of LaNiO3-delta was explained in terms oxygen deficiency induced band gap opening.

Item Type:	Journal Article
Publication:	MATERIALS RESEARCH BULLETIN
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Additional Information:	Copy right for this article belong to PERGAMON-ELSEVIER SCIENCE LTD
Keywords:	Band gap; Semiconductor; LaNiO3-delta; Nanocomposite; Photoconductivity; Photoresponse
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	09 Oct 2018 15:44
Last Modified:	09 Oct 2018 15:44
URI:	http://eprints.iisc.ac.in/id/eprint/60837

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