Bhattacharjee, S and Ganapathi, K L and Mohan, S and Bhat, N (2018) High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts. In: 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA.
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Official URL: http://dx.doi.org/10.1109/DRC.2018.8442194
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | IEEE Device Research Conference Proceedings |
| Publisher: | IEEE |
| Additional Information: | 76th Device Research Conference (DRC), Santa Barbara, CA, JUN 24-27, 2018 |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 05 Oct 2018 15:07 |
| Last Modified: | 05 Oct 2018 15:07 |
| URI: | http://eprints.iisc.ac.in/id/eprint/60821 |
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