Kumar, Arvind and Mondal, Sandip and Rao, K S R Koteswara (2018) Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.
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In this work, we have fabricated the nanostructured p-Si/n-TiO2 hetero-junction diode by using a facile spin-coating method. The XRD analysis suggests the presence of well crystalline anatase TiO2 film on Si with small grain size (similar to 16 nm). We have drawn the band alignment using Anderson model to understand the electrical transport across the junction. The current-voltage (J-V) characteristics analysis reveals the good rectification ratio (103 at +/- 3 V) and slightly higher ideality factor (4.7) of our device. The interface states are responsible for the large ideality factor as Si/TiO2 form a dissimilar interface and possess a large number of dangling bonds. The study reveals the promises to be used Si/TiO2 diode as an alternative to the traditional p-n homo-junction diode, which typically require high budget.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Publisher: | AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Additional Information: | Copy right for this article belong to AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 31 Aug 2018 14:45 |
| Last Modified: | 25 Aug 2022 05:41 |
| URI: | https://eprints.iisc.ac.in/id/eprint/60543 |
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