Pressure-induced electronic and structural phase transitions in Dirac semimetal Cd3As2: Raman study

Gupta, Satyendra Nath and Muthu, D V.S and Shekhar, C and Sankar, R and Felser, C and Sood, A K (2017) Pressure-induced electronic and structural phase transitions in Dirac semimetal Cd3As2: Raman study. In: EPL, 120 (5).

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Abstract

We report on the high-pressure Raman study of Cd3As2, a three-dimensional Dirac semimetal, up to 19 GPa at room temperature. Our study shows that light scattering by intervalley and intravalley density fluctuations give rise to electronic Raman scattering (ERS), with Lorentzian-like lineshape at low frequency. The strength and linewidth of the ERS are pressure dependent and exhibit a significant drop at P-c1 = 2.5 GPa, signifying a breakdown of the Dirac semimetal to a semiconducting phase. The first phase transition at Pc1 is also clearly identified by the significant changes in the pressure derivatives of phonon frequencies and linewidths. Pressure dependence of phonon parameters also reveal a second phase transition at P-c2 = 9.5 GPa, being reported for the first time. This semiconductor-to-semiconductor transition coincides with the abrupt changes seen in the activation energy (band gap) of the semiconductor phase. Copyright (C) EPLA, 2018.

Item Type:	Journal Article
Publication:	EPL
Publisher:	IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Additional Information:	Copy right for the article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Mar 2018 17:38
Last Modified:	14 Mar 2018 17:38
URI:	http://eprints.iisc.ac.in/id/eprint/59184

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