Dias, Sandra and Chirakkara, Saraswathi and Patel, Nagabhushan and Krupanidhi, S B (2018) Gallium and indium co-doped ZnO as a transparent conducting oxide for Cu2SnS3 photodetectors. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 29 (3). pp. 2131-2139.
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Ga and In co-doped ZnO (GIZO) thin films were grown by pulsed laser deposition for use as a transparent conducting oxide (TCO) in Cu2SnS3 (CTS) based photodetectors. The structural and optical properties were studied. The GIZO thin films were found exhibiting low resistivity of less than 10(-3) Omega cm, and a high transparency of 97% both in visible and IR region. The performances of CTS photodetector with GIZO and with ZnO buffer assisted GIZO (ZnO/GIZO) as TCO layers were compared. The CTS photodetector with ZnO/GIZO as TCO was found to be exhibiting a higher photoresponse with responsivity, external quantum efficiency and specific detectivity of 552.3 A W-1, 1247.3% and 3.9 x 10(12) Jones respectively. ZnO/GIZO could serve as an effective replacement for the commonly used TCO, indium tin oxide, which is expensive and non-earth abundant.
| Item Type: | Journal Article |
|---|---|
| Publication: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
| Additional Information: | Copy right for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 02 Mar 2018 15:06 |
| Last Modified: | 12 Aug 2022 05:47 |
| URI: | https://eprints.iisc.ac.in/id/eprint/58903 |
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