Mondal, Sandip and Kumar, Arvind and Rao, Koteswara KSR and Venkataraman, V (2016) Highly Reliable Spin-coated Titanium Dioxide Dielectric. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.
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Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO2) film after constant voltage stressing (CVS) with -4 V for 10(5) second at room temperature (300 K). The film was fabricated by sol-gel spin-coating method on a lightly doped p-Si (similar to 10(15) cm(-3)) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal-Oxide-Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800 degrees C for one hour in a preheated furnace. The dielectric degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400 degrees C, 600 degrees C and 1000 degrees C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 30 Aug 2016 10:15 |
| Last Modified: | 30 Aug 2016 10:15 |
| URI: | http://eprints.iisc.ac.in/id/eprint/54527 |
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