Solution processible Cu2SnS3 thin films for cost effective photovoltaics: Characterization

Dias, Sandra and Murali, Banavoth and Krupanidhi, SB (2015) Solution processible Cu2SnS3 thin films for cost effective photovoltaics: Characterization. In: MATERIALS CHEMISTRY AND PHYSICS, 167 . pp. 309-314.

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Abstract

Thin films of Cu2SnS3 (CTS) were deposited by the facile solution processed sol-gel route followed by a low-temperature annealing. The Cu-Sn-thiourea complex formation was analysed using Fourier Transform Infrared spectrophotometer (FTIR). The various phase transformations and the deposition temperature range for the initial precursor solution was determined using Thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). X-Ray Diffraction (XRD) studies revealed the tetragonal phase formation of the CTS annealed films. Raman spectroscopy studies further confirmed the tetragonal phase formation and the absence of any deterioratory secondary phases. The morphological investigations and compositional analysis of the films were determined using Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) respectively. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 1.3 nm. The absorption coefficient was found to be 10(4) cm(-1) and bandgap 1.3 eV which qualifies CTS to be a potential candidate for photovoltaic applications. The refractive index, extinction coefficient and relative permittivity of the film were measured by Spectroscopic ellipsometry. Hall effect measurements, indicated the p type nature of the films with a hole concentration of 2 x 10(18) cm(-3), electrical conductivity of 9 S/cm and a hole mobility of 29 cm(2)/V. The properties of CTS as deduced from the current study, present CTS as a potential absorber layer material for thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS CHEMISTRY AND PHYSICS
Publisher:	ELSEVIER SCIENCE SA
Additional Information:	Copy right for this article belongs to the ACOUSTICAL SOC AMER AMER INST PHYSICS, STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA
Keywords:	Semiconductors; Chemical synthesis; Thin films; Raman spectroscopy
Department/Centre:	Division of Mechanical Sciences > Mechanical Engineering
Date Deposited:	14 Jan 2016 07:03
Last Modified:	14 Jan 2016 07:03
URI:	http://eprints.iisc.ac.in/id/eprint/53098

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