Influence of deposition time on the properties of electrodeposited Cu(In,Al)Se-2 thin films

Deepa, KG and Jampana, Nagaraju (2015) Influence of deposition time on the properties of electrodeposited Cu(In,Al)Se-2 thin films. In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 39 . pp. 453-456.

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Abstract

Cu(In,Al)Se-2 films are grown using single step electrodeposition technique. The film properties are studied by varying the deposition time from 500 to 2000 s. Peaks corresponding to elemental Se and Cu2Se phase started appearing from 1200 s of deposition. The composition is changed significantly after 1500 S. Se concentration increased from 57 to 68% with the increase in the deposition time. The Cu2Se phase is dominant in the films deposited for a duration of 2000 s and the grain size increased from 1.12 to 2.15 mu m in this film. Raman analysis confirmed the presence of Se and Cu2Se phase in C1200. In C1500 and C2000 the spectra showed prominent mode corresponding to Cu2Se. The thickness of the film increased from 0.85 to 2.3 mu m with the increase in the deposition time. All the films showed p-type conductivity and resistivity reduced with increased thickness. (C) 2015 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Publisher:	ELSEVIER SCI LTD
Additional Information:	Copy right for this article belongs to the ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Keywords:	Electrodeposition; Thin films; Solar energy materials; Thickness
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	30 Oct 2015 06:52
Last Modified:	30 Oct 2015 06:52
URI:	http://eprints.iisc.ac.in/id/eprint/52578

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