Optimization of HfO2 films for high transconductance back gated graphene transistors

Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2013) Optimization of HfO2 films for high transconductance back gated graphene transistors. In: Applied Physics Letters, 103 (7). 073105_1-073105_5.

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Abstract

Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	04 Oct 2013 05:38
Last Modified:	04 Oct 2013 05:38
URI:	http://eprints.iisc.ac.in/id/eprint/47491

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