Nagaboopathy, Mohan and Ravishankar, Narayanan and Raghavan, Srinivasan (2013) Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth. In: APPLIED PHYSICS LETTERS, 103 (4).
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Abstract
The synergistic effect of compressive growth stresses and reactor chemistry, silane presence, on dislocation bending at the very early stages of GaN growth has been studied using in-situ stress measurements and cross-sectional transmission electron microscopy. A single 100 nm Si-doped GaN layer is found to be more effective than a 1 mu m linearly graded AlGaN buffer layer in reducing dislocation density and preventing the subsequent layer from transitioning to a tensile stress. 1 mu m crack-free GaN layers with a dislocation density of 7 x 10(8)/cm(2), with 0.13 nm surface roughness and no enhancement in n-type background are demonstrated over 2 inch substrates using this simple transition scheme. (C) 2013 AIP Publishing LLC.
Item Type: | Journal Article |
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Publication: | APPLIED PHYSICS LETTERS |
Publisher: | AMER INST PHYSICS |
Additional Information: | Copyright of this article is belongs to AMER INST PHYSICS |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 24 Sep 2013 07:30 |
Last Modified: | 24 Sep 2013 07:30 |
URI: | http://eprints.iisc.ac.in/id/eprint/47299 |
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