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Growth and photovoltaic performance of SnS quantum dots

Deepa, KG and Nagaraju, J (2012) Growth and photovoltaic performance of SnS quantum dots. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 177 (13). pp. 1023-1028.

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Official URL: http://dx.doi.org/10.1016/j.mseb.2012.05.006

Abstract

Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn2S3 and SnS2 which is visible in the SAED pattern. From the electrochemical characterization. HOMO-LUMO levels of both TiO2 and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO2. Moreover, the HOMO-LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO2 thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO2. Without the buffer layer, cell showed an open circuit voltage (V-oc) of 504 mV and short circuit current density (J(sc)) of 2.3 mA/cm(2) under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots. (C) 2012 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Publication: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Publisher: ELSEVIER SCIENCE BV
Additional Information: Copyright for this article belongs to ELSEVIER SCIENCE
Keywords: SnS quantum dots;TEM; SAED pattern;Solar cells;Cyclic voltammetry
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 08 Nov 2012 10:59
Last Modified: 08 Nov 2012 10:59
URI: http://eprints.iisc.ac.in/id/eprint/45329

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