High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA.

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Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	Copyright 1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material foradvertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	28 Apr 2011 09:41
Last Modified:	28 Apr 2011 09:41
URI:	http://eprints.iisc.ac.in/id/eprint/37284

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