Characterization of defects in gallium arsenide

Kumar, Vikram and Mohapatra, YN (1990) Characterization of defects in gallium arsenide. In: 1ST NATIONAL SEMINAR ON GAAS AND III-IV COMPOUND SEMICONDUCTORS, APR 29-30, 1988, KHARAGPUR, INDIA.

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Abstract

It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide.

Item Type:	Conference Paper
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright of this article belongs to Indian Academy of Sciences.
Keywords:	Gallium arsenide;deep level transient spectroscopy;semi-insulating gallium arsenide;photoconductivity;photo luminescence.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	03 Feb 2011 05:29
Last Modified:	03 Feb 2011 05:29
URI:	http://eprints.iisc.ac.in/id/eprint/35249

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