Raghu, N and Kutty, TRN (1990) The influence of dislocations on the nonlinearity of ZnO:Cu varistors. In: Journal of Materials Science: Materials in Electronics, 1 (2). pp. 84-86.
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Abstract
Zinc Oxide doped only with Cu shows highly nonlinear I–V characteristics. Microstructural observations of these ceramics reveal the presence of extensive dislocation network. The transmission electron microscopy (TEM) indicates that the dislocations are impurity decorated which arise as a result of limited solubility of CuO in ZnO. It is envisaged that the depletion region is generated in the region containing the dislocations because of the presence of acceptor type traps.
Item Type: | Journal Article |
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Publication: | Journal of Materials Science: Materials in Electronics |
Publisher: | Springer |
Additional Information: | Copyright of this article belongs to Springer. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 11 Jan 2011 07:09 |
Last Modified: | 02 May 2011 04:40 |
URI: | http://eprints.iisc.ac.in/id/eprint/34932 |
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