Late, Dattatray J and Ghosh, Anupama and Subrahmanyam, KS and Panchakarla, LS and Krupanidhi, SB and Rao, CNR (2010) Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes. In: Solid State Communications, 150 (15-16). pp. 734-738.
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Abstract
Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. (C) 2010 Elsevier Ltd. All rights reserved.
Item Type: | Journal Article |
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Publication: | Solid State Communications |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Graphene;Field-effect transistor;Mobility;Doping |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
Date Deposited: | 07 Jun 2010 06:14 |
Last Modified: | 19 Sep 2010 06:01 |
URI: | http://eprints.iisc.ac.in/id/eprint/27436 |
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