Discussion of enthalpy, entropy and free energy of formation of GaN

Jacob, KT and Rajitha, G (2009) Discussion of enthalpy, entropy and free energy of formation of GaN. In: Journal Of Crystal Growth, 311 (14). pp. 3806-3810.

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Abstract

Presented in this letter is a critical discussion of a recent paper on experimental investigation of the enthalpy, entropy and free energy of formation of gallium nitride (GaN) published in this journal [T.J. Peshek, J.C. Angus, K. Kash, J. Cryst. Growth 311 (2008) 185-189]. It is shown that the experimental technique employed detects neither the equilibrium partial pressure of N-2 corresponding to the equilibrium between Ga and GaN at fixed temperatures nor the equilibrium temperature at constant pressure of N-2. The results of Peshek et al. are discussed in the light of other information on the Gibbs energy of formation available in the literature. Entropy of GaN is derived from heat-capacity measurements. Based on a critical analysis of all thermodynamic information now available, a set of optimized parameters is identified and a table of thermodynamic data for GaN developed from 298.15 to 1400 K.

Item Type:	Journal Article
Publication:	Journal Of Crystal Growth
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Dissociation pressure;Enthalpy of formation;Entropy; Thermodynamics;Nitrides;Semiconducting gallium compounds.
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	25 Aug 2009 06:53
Last Modified:	19 Sep 2010 05:42
URI:	http://eprints.iisc.ac.in/id/eprint/22450

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