Electronic conduction in bulk selenium-tellurium $(Se_{1-x}Te_x)$ glasses at high pressures and at low temperatures

Parthasarathy, G and Gopal, ESR (1984) Electronic conduction in bulk selenium-tellurium $(Se_{1-x}Te_x)$ glasses at high pressures and at low temperatures. In: Bulletin of Materials Science, 6 (2). pp. 231-242.

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Abstract

The electrical resistivity of bulk $Se_{1-x}Te_x$, glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77 K). The activation energy for electronic conduction has been calculated at different pressures. The samples with $0\leq x \leq 0.06$ show a single activation energy throughout the temperature range of investigations. On the other hand samples with $0.08 \leq x \leq 0.3$ show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors.

Item Type:	Journal Article
Publication:	Bulletin of Materials Science
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright of this article belongs to Indian Academy of Sciences
Keywords:	Chalcogenide glasses;pressure induced semiconductor to metal transitions;amorphous semiconductors
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	02 Apr 2008
Last Modified:	19 Sep 2010 04:43
URI:	http://eprints.iisc.ac.in/id/eprint/13472

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