Cohesive zone model for direct silicon wafer bonding

Kubair, DV and Spearing, SM (2007) Cohesive zone model for direct silicon wafer bonding. In: Journal of Physics D-Applied Physics, 40 (10). pp. 3070-3076.

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Abstract

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale- modelling approach to understand the mechanics of wafer bonding.

Item Type:	Journal Article
Publication:	Journal of Physics D-Applied Physics
Publisher:	Institute of Physics (IOP)
Additional Information:	Copyright of this artricle belongs to Institute of Physics(IOP).
Department/Centre:	Division of Mechanical Sciences > Aerospace Engineering(Formerly Aeronautical Engineering)
Date Deposited:	14 Aug 2007
Last Modified:	19 Sep 2010 04:39
URI:	http://eprints.iisc.ac.in/id/eprint/11703

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