Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Hudait, MK and Krupanidhi, SB (2001) Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy. In: Journal of Applied Physics, 89 (11). pp. 5972-9.

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Abstract

The self-annihilation of antiphase boundaries (APBs)in GaAs epitaxial layers grown by low-pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several characterization techniques. Cross-sectional transmission electron microscopy shows that antiphase domain free GaAs growth on Ge was possible due to the proper selection of the growth parameters. The antiphase boundaries annihilate with each other after a thick 3 mm layer of GaAs growth on a Ge substrate as observed by scanning electron microscopy studies. Double crystal x-ray diffraction data shows a slight compression of GaAs on Ge, and the full width at half maximum decreases with increasing growth temperatures. This confirms that the APBs annihilate inside the GaAs epitaxial films. Low temperature photoluminescence measurements confirm the self-annihilation of the APBs at low temperature growth and the generation of APBs at higher growth temperatures.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics (AIP)
Additional Information:	Copyright for this article belongs to American Institute of Physics (AIP)
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	16 Jan 2007
Last Modified:	19 Sep 2010 04:12
URI:	http://eprints.iisc.ac.in/id/eprint/85

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