Diffusion-enhanced preferential growth of m-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001)

Lee, H and Park, J-H and Maity, N and Kim, D and Jang, D and Kim, C and Yoon, Y-G and Singh, AK and Han, Y and Yoon, S-G (2022) Diffusion-enhanced preferential growth of m-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001). In: Materials Today Communications, 30 .

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Abstract

A graphene film with a domain size larger than 100μm was grown on a Ti/SiO2/Si(001) template. To make a comparative investigation of the effect of a domain size of graphene on the growth behavior of GaN micro-domains, GaN micro-domains were grown on either directly grown graphene with a large domain size or transferred graphene. The unusual dominance of m-oriented GaN domains over c-oriented ones was observed when grown at 985�C on graphene directly grown on Ti/SiO2/Si. Unlike the preferential formation of m-oriented GaN, c-oriented GaN domains dominated over m-oriented ones when grown at 935�C on directly grown graphene or at 985�C on transferred graphene. The dependence of the preferred orientation of GaN domains on growth temperature and the type of graphene was explained by the distinct diffusion barrier of adatoms under different conditions. In addition, the aspect ratio of individual domains and the surface morphology of c-facet of each of m- and c-oriented GaN domains also suggest that the growth behavior was significantly influenced by diffusion on both graphene and the different facets of GaN. The enhanced diffusion on directly grown graphene was associated with a large domain size. © 2022 Elsevier Ltd

Item Type:	Journal Article
Publication:	Materials Today Communications
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to Elsevier Ltd
Keywords:	Aspect ratio; Diffusion barriers; Gallium nitride; III-V semiconductors; Morphology; Silicon; Surface morphology; Titanium compounds, Domain size; Graphene films; Growth behavior; Large domain; Micro-domains; Nitride materials; Preferential growth; Surfaces and interfaces; Vapour deposition; X- ray diffractions, Graphene
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	24 Jan 2022 06:09
Last Modified:	24 Jan 2022 06:09
URI:	http://eprints.iisc.ac.in/id/eprint/71012

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