Differentiation of ultraviolet/visible photons from near infrared photons by MoS2/GaN/Si-based photodetector

Singh, DK and Pant, RK and Nanda, KK and Krupanidhi, SB (2021) Differentiation of ultraviolet/visible photons from near infrared photons by MoS2/GaN/Si-based photodetector. In: Applied Physics Letters, 119 (12).

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Abstract

Conventional photodetectors (PDs) generally exhibit a unipolar photoresponse within their responsive spectral range. Different from the traditional PDs, we report here a broadband PD based on the MoS2/GaN/Si heterojunction that shows a unique phenomenon of wavelength selectivity through photocurrent polarity inversion. Overall, the device can differentiate the photons of the ultraviolet (UV)/visible region from that of the near infrared (NIR) region. This polarity inversion is explained with the help of the band diagram and the wavelength dependent photothermoelectric (PTE) effect in MoS2. The vertical transport characteristics of the MoS2/GaN/Si device exhibit a high spectral response in a broad range of wavelengths (300-1100�nm) in a self-biased mode. The maximum response of the device is found to be 23.81�A/W at a wavelength of 995�nm. Our results demonstrate a route for the development of PDs without filter that possess a lot of potential for the futuristic photonic devices. © 2021 Author(s).

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Keywords:	Heterojunctions; Infrared devices; Layered semiconductors; Molybdenum compounds; Photodetectors; Photonic devices, Band diagrams; Near infrared region; Near-infrared photons; Photo-thermoelectric; Photoresponses; Polarity inversion; Si-based photodetectors; Spectral range; Visible region; Wavelength Selectivity, Photons
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	29 Nov 2021 11:04
Last Modified:	29 Nov 2021 11:04
URI:	http://eprints.iisc.ac.in/id/eprint/70278

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