Peculiar Current Instabilities Failure Mechanism in Vertically Stacked Nanosheet ggN-FET

Monishmurali, M and Shrivastava, M (2021) Peculiar Current Instabilities Failure Mechanism in Vertically Stacked Nanosheet ggN-FET. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey.

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Abstract

The behavior of gate grounded vertically stacked nanosheet N-FET (ggNFET) under ESD stress is investigated in this work. Single Fin (3-Sheet) ggNFET devices exhibit multiple instability points in the TLP-IV characteristic around the snapback region. Each of these instabilities was found to be arising due to non-uniform sheet turn-on and was independent of the presence of body contact. However, this instability was more severe, with a decreased body distance from the source. Furthermore, the sequence of turn-on was found to be dependent on the TLP current ramp rate. A 24-Fin (72 Sheet) ggNFET was simulated to reproduce the current filament like behavior. These 24-Fin simulations revealed a more severe low-current instability due to both non-uniform sheet turn-on and non-uniform Fin turn-on. For a smaller body to source contact distance, this non-uniform turn-on was seen to result in an early failure of the device. © 2021 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Fins (heat exchange); Nanosheets, Body contacts; Current filaments; Current instability; Early failure; Failure mechanism; Instability points; IV characteristics; Source contact, Failure (mechanical)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	04 Aug 2021 06:58
Last Modified:	04 Aug 2021 06:58
URI:	http://eprints.iisc.ac.in/id/eprint/68945

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