Fermi level tuning and the robustness of topological surface states against impurity doping in Sn doped Sb 2 Te 2 Se

Mallick, D and Mandal, S and Ganesan, R and Anil Kumar, PS (2021) Fermi level tuning and the robustness of topological surface states against impurity doping in Sn doped Sb 2 Te 2 Se. In: Applied Physics Letters, 118 (15).

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Abstract

In this work, we have studied the transport properties of two different single crystals, Sb2Te2Se and Sn-doped Sb2Te2Se. By analyzing the Shubnikov-de Haas oscillations for the devices made from both the crystals, we have extracted the Berry phase. The non-trivial value of the Berry phase for both the samples unambiguously indicates the robustness of the topological surface states against the impurity doping. The parent compound is n-type due to excess Te vacancies, and we could show from the sign of the intercept in the Landau level fan diagram and from the Hall effect measurements that doping with Sn makes it p-type. This demonstrates the tuning of the Fermi level in a topological insulator upon Sn doping. © 2021 Author(s).

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Keywords:	Antimony; Antimony compounds; Crystal impurities; Electric currents; Fermi level; Fruits; Selenium compounds; Semiconductor doping; Surface states; Tellurium; Tellurium compounds; Tin compounds; Topological insulators; Topology, Berry phase; Hall effect measurement; Impurity doping; Landau levels; Non-trivial; Parent compounds; Shubnikov de-Haas oscillation; Sn doping, Tin
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Jul 2021 11:01
Last Modified:	14 Jul 2021 11:01
URI:	http://eprints.iisc.ac.in/id/eprint/68792

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