Das, B and Mahapatra, S (2020) First Principles Based Compact Model for 2D-Channel MOSFETs. In: 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020, 4-6 Mar 2020, Shibpur; India.
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Abstract
We propose a generalized compact model for any two-dimensional material channel-based metal-oxide-semiconductor field-effect transistors. Unlike existing ones, the proposed model is first principles based and thus has ability to predict the circuit performance only using the crystallographic information of the channel material. It is 'core' in nature and developed following the industry-standard drift-diffusion formalism based 'top-down' hierarchy employing the Fermi-Dirac statistics. We also implement the model in professional circuit simulator and good convergence is observed in 15-stage ring oscillator simulation. © 2020 IEEE.
Item Type: | Conference Paper |
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Publication: | 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright of this article belongs to Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Metals; MOS devices; MOSFET devices; Oxide semiconductors, Channel materials; Circuit performance; Circuit simulators; Crystallographic information; Fermi-Dirac statistics; First principles; Industry standards; Two-dimensional materials, Circuit simulation |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 04 Mar 2021 06:22 |
Last Modified: | 04 Mar 2021 06:22 |
URI: | http://eprints.iisc.ac.in/id/eprint/67980 |
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