Nonlinear I–V characteristics of nanocrystalline $SnO_2$

Bose, Chandra A and Thangadurai, P and Ramasamy, S and Ganesan, Vijaya and Asokan, S (2006) Nonlinear I–V characteristics of nanocrystalline $SnO_2$. In: Nanotechnology, 17 (6). pp. 1752-1757.

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Abstract

Current versus voltage characteristics (I–V) of nanocrystalline $SnO_2$ materials have been investigated in air at room temperature. The samples were prepared by the inert gas condensation technique (IGCT) as well as by chemical methods. X-ray diffraction studies showed a tetragonal rutile structure for all the samples. Microstructural studies were performed with transmission electron microscopy. All the samples exhibited nonlinear I–V characteristics of the current-controlled negative resistance (CCNR) type. The results show that the threshold field (break down) voltage is higher for the samples prepared by the IGCT method than for those prepared by the chemical method due to the formation of a tin oxide layer over the crystalline tin. It is also found that the threshold field increases with the decrease in grain size.

Item Type:	Journal Article
Publication:	Nanotechnology
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	22 May 2006
Last Modified:	19 Sep 2010 04:26
URI:	http://eprints.iisc.ac.in/id/eprint/6757

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