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Thermoelectric properties of p-type filled skutterudites SxCo4Sb12

Ghosh, S and Raut, KK and Ramakrishnan, A and Chen, KH and Hong, S-J and Mallik, RC (2020) Thermoelectric properties of p-type filled skutterudites SxCo4Sb12. In: AIP Conference Proceedings, 18-22 December 2019, Rajasthan; India.

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Official URL: https://dx.doi.org/10.1063/5.0016889

Abstract

The electronegativity difference between the filler and the host atom of skutterudites determines the bonding type, which effects the thermoelectric properties. The electropositive elements with low electronegativity compared to Sb atom can form n-type filled skutterudites. In this study, the electronegative element sulphur has filled into voids. A series of SxCo4Sb12 (x= 0.05 to 0.4) compounds were synthesized by the solid-state method. CoSbS secondary phase was observed for x > 0.05. Filling fraction of sulphur into the void (-0.04) was calculated using electron probe microanalyzer which agrees with Rietveld refinement of the X-ray diffraction pattern. The transport properties were measured from 350 K to 723 K. The positive Seebeck coefficient (S) confirms p-type semiconducting nature. S and the electrical resistivity (�) decreased with increasing x due to increased carrier concentration (n). All the samples except x=0.05 possess almost same S and � due to saturation of filling fraction. The enhanced phonon scattering in SxCo4Sb12 resulted in low thermal conductivity (κ). The highest zT of 0.18 at 623 K was achieved for S0.15Co4Sb12 © 2020 American Institute of Physics Inc.. All rights reserved.

Item Type: Conference Paper
Publication: AIP Conference Proceedings
Publisher: American Institute of Physics Inc.
Additional Information: cited By 0; Conference of 64th DAE Solid State Physics Symposium 2019, DAE-SSPS 2019 ; Conference Date: 18 December 2019 Through 22 December 2019; Conference Code:164824
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 05 Jan 2021 06:08
Last Modified: 05 Jan 2021 06:08
URI: http://eprints.iisc.ac.in/id/eprint/67190

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