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Materials and Processing of TSV

Kumar, P and Dutta, I and Huang, Z and Conway, P (2021) Materials and Processing of TSV. [Book Chapter]

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Official URL: https://dx.doi.org/10.1007/978-981-15-7090-2_3

Abstract

This chapter introduces the critical steps involved in fabricating TSVs and associated materials. The fabrication steps for TSVs begin with etching of high aspect ratio trenches in Si, followed by placement of dielectric, barrier and seed layers, TSV filling and polishing, and then assembly with other components of a device. In addition, planarization, die-thinning and flow processes to fabricate TSV-enabled 3-D architectured microelectronic package are described. Challenges associated with processing of TSVs as well as methods for overcoming them are highlighted and discussed. © 2021, The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

Item Type: Book Chapter
Additional Information: Copyright to this article belongs to Springer Science and Business Media Deutschland GmbH
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Mr Parikshita Behera
Date Deposited: 06 Jan 2021 05:43
Last Modified: 06 Jan 2021 05:43
URI: http://eprints.iisc.ac.in/id/eprint/67165

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