Mukhokosi, EP and Manohar, GVS and Nagao, T and Krupanidhi, SB and Nanda, KK (2020) Device architecture for visible and near-infrared photodetectors based on two-dimensional SnSe2 and MoS2: A review. In: Micromachines, 11 (8).
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Abstract
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3-6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.
| Item Type: | Journal Article |
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| Publication: | Micromachines |
| Publisher: | MDPI AG |
| Additional Information: | The copyright of this article belongs to MDPI AG |
| Keywords: | Energy gap; Gallium alloys; Gallium arsenide; Graphene; III-V semiconductors; Indium alloys; Infrared detectors; Infrared devices; Layered semiconductors; Molybdenum compounds; Photodetectors; Photodiodes; Photons; Selenium compounds; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Silicon; Silicon alloys; Tin compounds; Transition metals, Absorption co-efficient; Alternative materials; Device architectures; Indium gallium arsenide; Infrared photodetector; Intrinsic property; Orders of magnitude; Visible and near infrared, Sulfur compounds |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 07 Sep 2020 11:24 |
| Last Modified: | 07 Sep 2020 11:24 |
| URI: | http://eprints.iisc.ac.in/id/eprint/66484 |
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