Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs

Monishmurali, M and Paul, M and Shrivastava, M (2020) Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

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Abstract

Failure threshold in Fin based SCR (FinSCR) was found to be severely limited by the non-uniform current distribution across the anode/cathode fins, attributed to non-uniform turn-on of individual fins.Unique physical insights related to FinSCR turn-on uniformity and position of hot-spot are developed as a function of the placement of n-& p-tap Fins relative to cathode and anode fins. Based on the understanding, unique tap schemes are explored in FinSCR, which offered relaxed self-heating, improved turn-on uniformity and IT2. A novel Distributed Tap FinSCR (DTFSCR) device is proposed, which offers uniform conduction i.e. failure threshold scalability with the number of fins in the anode & cathode regions. Finally, the effect of placement of ESD implants in the anode and cathode regions are discussed. © 2020 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550
Keywords:	Anodes; Cathodes, Cathode and anode; Cathode region; Failure currents; Failure thresholds; Hot spot; Non-uniform; Nonuniform current distributions; Self-heating, Fins (heat exchange)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	24 Nov 2020 10:02
Last Modified:	24 Nov 2020 10:02
URI:	http://eprints.iisc.ac.in/id/eprint/66176

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